One-dimensional phonon-coupled electron tunneling: A realistic model

被引:5
|
作者
Pazy, E [1 ]
Laikhtman, B [1 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
关键词
D O I
10.1103/PhysRevB.59.15854
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transition probability for a one-dimensional tunneling electron coupled to acoustical phonons is calculated, with the Feynman path-integral method. We considered a realistic electron-phonon interaction (deformation potential, piezoelectric), making use of slowness of the phonon system compared to electron tunneling. We show that the problem of the complex nonlinear coupling of a tunneling electron to the zero-point fluctuations of a phonon field is equivalent to that of an electron tunneling through a slow fluctuating spatially uniform barrier, thus resulting in an increase of the tunneling probability due to electron coupling with zero-point phonon oscillations. We calculated also the energy change of the tunneling electron due to phonon emission.
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页码:15854 / 15861
页数:8
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