Quantum Hall effect: Its breakdown due to current

被引：0
|
作者：
Kawaji, S
机构：
[1] Department of Physics, Gakushuin University, Tokyo 171, 1-5-1 Mejiro, Toshima-ku
来源：
PHYSICA B | 1996年 / 216卷 / 3-4期
关键词：
D O I：
10.1016/0921-4526(95)00525-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Breakdown of the quantum Hall effect due to current has been studied in specially designed samples with a width ranging between 3 and 120 mu m made from GaAs/AlGaAs wafers at 0.5 K in magnetic fields B up to 23 T. The critical current at the onset of the breakdown is proportional to the sample width irrespective of electron mobility. The critical Hall electric field at the breakdown is proportional to B-3/2. Experimental results are discussed based on a model where dissipative carriers are produced by an inter-landau-level transition caused by strong Hall electric field.
引用
收藏
页码：393 / 395
页数：3
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