Topics in Present-day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors

被引：3

作者：

Rodrigues, Cloves Goncalves ^{[1
]}

Vasconcellos, Aurea Rosas ^{[2
]}

Luzzi, Roberto ^{[2
]}

机构：

[1] PUC Goias, Dept Fis, BR-74605010 Goiania, Go, Brazil

[2] Univ Campinas Unicamp, Inst Fis Gleb Wataghin, Dept Fis Mat Condensada, BR-13083859 Campinas, SP, Brazil

来源：

MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS | 2015年 / 18卷 / 03期

基金：

巴西圣保罗研究基金会;

关键词：

ultrafast relaxation; semiconductors; nonequilibrium thermodynamic; COHERENT-PHONON OSCILLATIONS; NONLINEAR TRANSPORT-PROPERTIES; III-NITRIDES; IRREVERSIBLE THERMODYNAMICS; ELECTRON-MOBILITY; DISPLACIVE EXCITATION; PHOTOINJECTED PLASMA; MICROSCOPIC APPROACH; GREEN-FUNCTIONS; HOT CARRIERS;

D O I：

10.1590/1516-1439.293614

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on Thermo-Mechanical Statistics. In electronics and optoelectronics we face situations involving physical-chemical systems far-removed-from equilibrium, where ultrafast (in pico-and femto-second scale) and non-linear processes are present. Here we describe in an extended overview the question of ultrafast relaxation processes in the excited plasma in semiconductors.

引用

页码：453 / 467

页数：15

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