Phase-change behaviors in Ga30Sb70/Sb80Te20 nanocomposite multilayer films

被引：0
|
作者：
Wang Chang-Zhou [1 ,2 ]
Zhu Wei-Ling [3 ]
Zhai Ji-Wei [1 ]
Lai Tian-Shu [3 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Chinese Acad Sci, Thin Film Optoelect Technol Ctr, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
ACTA PHYSICA SINICA | 2013年 / 62卷 / 03期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
nanocomposite; multilayer films; phase-change behavior; optical properties;
D O I：
10.7498/aps.62.036402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Novel Ga30Sb70/Sb80Te20 nanocomposite multilayer films are prepared by alternate sputter deposition of two independent targets of Ga30Sb70/Sb80Te20 in a magnetron sputtering system. The influence of layer thickness of Ga30Sb70 on the phase-change behavior of Ga30Sb70/Sb80Te20 multilayer film is investigated. The results show that the crystallization temperature can be controlled by adjusting the layer thickness of Ga30Sb70. The crystallization temperature increases with increasing the layer thickness of Ga30Sb70. The optical band gap is also found to increase with increasing in the layer thickness of Ga30Sb70. Transient crystallization dynamics of Ga30Sb70/Sb80Te20 multilayer film induced by single picosecond laser pulse pumping, is studied. The reversible phase transition between amorphous and crystalline state can be achieved by using picosecond laser pulses with different fluences.
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页数：7
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