Impact of Collection Efficiency on the Optical Responsivity of Lattice Matched InP/InGaAs Heterojunction Phototransistors

被引：3

作者：

Khan, Hassan A. ^{[1
]}

Rezazadeh, Ali A. ^{[2
]}

Saleem, Rashid ^{[3
]}

机构：

[1] Lahore Univ Management Sci, Dept Elect Engn, Lahore Cantt 54792, Pakistan

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[3] Univ Engn & Technol, Dept Elect Engn, Taxila 47050, Pakistan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 07期

关键词：

DIFFUSION LENGTH; GAIN; FREQUENCY; RANGE;

D O I：

10.1143/JJAP.51.072202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Absolute spectral response modeling of lattice matched Npn InP/In0.53Ga0.47As heterojunction phototransistors (HPTs), for communication wavelength detection, is presented in this paper. Parameters such as collection efficiency, quantum efficiency and doping concentrations affecting the flux absorption profile are discussed. The effect of collection efficiency on the optical responsivity is also highlighted and its variation with device vertical width is discussed. Measured results for optical responsivity, at several incident wavelengths, show close agreement to the modeling data for the HPTs. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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