Electrochemically Grown Nono-Structured TiO2 Based Low Power Resistive Random Access Memory

Nano TiO2 thin film was grown on high purity Ti foil by electrochemical anodization techniques using 1 (M) as H2SO4 electrolyte. Film was annealed at 600 degrees C for 1 hour to prepare rutile crystalline TiO2. Au metal contact was used as a top electrode contact to fabricate Au/TiO2/Ti memory devices for RRAM application. XRD, SEM and optical studies of the the TiO2 thin film were carried out to investigate the structural, morphological and optical characteristics of the prepared TiO2 thin film respectively. Bipolar resistive switching characteristics was measured using five different Au/TiO2/Ti devices which showed very repeatable, reproducible and stable memory performance with very low set and reset voltage of +0.24 V and -0.25 V respectively without application of any electroforming voltage. Bipolar switching phenomenon was explained by Schottky emission theory as well as filamentary models.