A Wideband 100 GHz Low Noise Amplifier with Slow-Wave CPW in 65 nm LP CMOS

被引：1
|
作者：
Park, Jung-Dong [1 ]
Niknejad, Ali M. [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2013年 / 55卷 / 08期
关键词：
low noise amplifier; CMOS; slow-wave; coplanar waveguide;
D O I：
10.1002/mop.27671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 100 GHz low noise amplifier (LNA) utilizing the slow-wave coplanar waveguide (SW-CPW) is presented in 65 nm low power (LP) CMOS process. A multistage wideband LNA is designed with minimal power gain degradation by carefully selecting degeneration inductance. Interstage matching networks are implemented with characterized SW-CPW which has effective permittivity (eff) equal to 13. The fabricated 100 GHz LNA achieves 8.8 dB of power gain and 6.9 dB of the noise figure including RF pads. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1954-1957, 2013
引用
收藏
页码：1954 / 1957
页数：4
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