Effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors

被引:27
|
作者
Harmon, N. J. [1 ]
Flatte, M. E.
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 24期
关键词
RADICAL RECOMBINATION REACTIONS; WEAK MAGNETIC-FIELDS; DIPOLAR INTERACTIONS; ROOM-TEMPERATURE; SPINTRONICS; MODULATION; COMPASS; DEVICES;
D O I
10.1103/PhysRevB.85.245213
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Through the use of spin-dependent perturbation theory in the percolative transport regime, analytic results are discovered when the hyperfine, exchange, and dipolar interactions have little time to operate between hopping events. We find an angle-of-field dependence of the magnetoresistance that agrees with previous experiments and numerical simulations. In addition, we report on magnetoresistive behavior that critically depends upon the amount of anisotropy in the dipolar interaction.
引用
收藏
页数:9
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