Stimulated Raman scattering and Raman laser operation in silicon single crystals at low temperatures

被引：2
|
作者：
Lux, O. [1 ]
Rhee, H. [1 ]
Lisinetskii, V. A. [2 ]
Meister, S. [1 ]
Woggon, U. [1 ]
Juda, U. [3 ]
Riemann, H. [3 ]
Kaminskii, A. A. [4 ]
Eichler, H. J. [1 ]
机构：
[1] Tech Univ Berlin, Inst Opt & Atom Phys, D-10623 Berlin, Germany
[2] Univ Appl Sci Wildau, Dept Engn Phys, D-15745 Wildau, Germany
[3] Leibniz Inst Kristallzuchtung, D-12489 Berlin, Germany
[4] Russian Acad Sci, Inst Crystallog, Moscow 119333, Russia
来源：
LASER PHYSICS LETTERS | 2012年 / 9卷 / 12期
关键词：
stimulated Raman scattering; SRS; SRS threshold; Raman laser; silicon single crystals; laser wavelength conversion; WAVE-GUIDES; ABSORPTION; CARRIER; DEPENDENCE;
D O I：
10.7452/lapl.201210096
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on stimulated Raman scattering (SRS) in bulk silicon single crystals at liquid helium temperatures around 10 K. The increase of the band gap at such low temperatures drastically reduces the absorption of 1.06415 mu m pump radiation. As a result, first and second order Stokes radiation at 1.127 and 1.197 mu m could be generated by a mode-locked Nd:YAG laser at 1.06415 mu m. The temperature-dependent SRS threshold in undoped as well as gold-and antimony-doped Si single crystals is determined for different crystal orientations. In addition, we pumped an external cavity including Si single crystals at 10K with a Q-switched Nd: YAG-MOPA system to demonstrate Raman laser operation at 1.127 mu m emission wavelength. Computational simulations of the free carrier induced defocusing effect were performed in order to optimize the resonator design and provide stable laser operation. (C) 2012 by Astro, Ltd.
引用
收藏
页码：858 / 867
页数：10
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