Room temperature luminescent InGaAs/GaAs core-shell nanowires

被引：33
|
作者：
Jabeen, F. [1 ,2 ]
Rubini, S. [1 ]
Grillo, V. [1 ]
Felisari, L. [1 ]
Martelli, F. [1 ]
机构：
[1] INFM, CNR, Lab TASC, I-34012 Trieste, Italy
[2] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期
关键词：
D O I：
10.1063/1.2977475
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low temperatures their luminescence intensity is two to three orders of magnitudes larger than that of parent InGaAs nanowires grown without external GaAs shell. The nanowires have been structurally characterized by scanning electron microscopy and transmission electron microscopy. (c) 2008 American Institute of Physics.
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