Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene

被引：30

作者：

Somphonsane, R. ^{[1
]}

Ramamoorthy, H. ^{[2
]}

Bohra, G. ^{[2
]}

He, G. ^{[2
]}

Ferry, D. K. ^{[3
,4
,5
]}

Ochiai, Y. ^{[5
]}

Aoki, N. ^{[5
]}

Bird, J. P. ^{[2
,5
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[4] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[5] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

来源：

NANO LETTERS | 2013年 / 13卷 / 09期

基金：

美国国家科学基金会;

关键词：

Graphene; hot carriers; energy relaxation; electron-phonon scattering; ELECTRON-PHONON INTERACTION; FIELD-EFFECT TRANSISTORS; QUANTUM-WELL; PHOTOCURRENT; TRANSPORT;

D O I：

10.1021/nl4020777

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.

引用

页码：4305 / 4310

页数：6

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