Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires

被引：0
|
作者：
Deng, C
Sigmon, TW
Wu, JC
Wybourne, MN
机构：
[1] OREGON GRAD INST SCI & TECHNOL,DEPT ELECT ENGN & APPL PHYS,PORTLAND,OR 97291
[2] UNIV OREGON,DEPT PHYS,EUGENE,OR 97403
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 08期
关键词：
D O I：
10.1149/1.1837069
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
(100) Si substrates are patterned with arrays of Ge wires similar to 60 nm in width and similar to 6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as similar to 30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.
引用
收藏
页码：2678 / 2680
页数：3
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