Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

被引：24

作者：

Durnev, M. V. ^{[1
]}

Glazov, M. M. ^{[1
]}

Ivchenko, E. L. ^{[1
]}

Jo, M. ^{[2
]}

Mano, T. ^{[2
]}

Kuroda, T. ^{[2
]}

Sakoda, K. ^{[2
]}

Kunz, S. ^{[3
]}

Sallen, G. ^{[3
]}

Bouet, L. ^{[3
]}

Marie, X. ^{[3
]}

Lagarde, D. ^{[3
]}

Amand, T. ^{[3
]}

Urbaszek, B. ^{[3
]}

机构：

[1] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse, France

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 08期

关键词：

ELECTRON; LOCALIZATION; WELL;

D O I：

10.1103/PhysRevB.87.085315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111) A Ga-rich surfaces. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots. DOI: 10.1103/PhysRevB.87.085315

引用

页数：11

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