A novel analysis method of distributed and traveling-wave amplifiers leading to power gain improvement

A new approach, based on scattering wares, for the analysis of distributed and traveling-wave amplifiers is developed. It uses the scattering parameters of the passive elements and the measured and calculated parameters of the MESFET transistor. Thus, the approach overcomes the assumption of the simplified model of the MESFET transistor as they are needed in the already known methods. This approach can be used for both lumped as well as distributed circuits. Consequently, it can be applied to a distributed amplifier with artificial or real transmission lines. We demonstrate its validity through experimental results. Furthermore, it easily, considers the effects of reflections at different ports of the amplifier which have allowed its to achieve all improvement of the power gain approaching 60% at midband using a new topology of a distributed amplifier. (C) 2002 John Wiley Sons, Inc.