Observation of clear negative differential resistance characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs multiple quantum wells at room temperature

被引：5
|
作者：
Uesugi, K [1 ]
Kurimoto, M
Suemune, I
Yamamoto, M
Uemura, T
Machida, H
Shimoyama, N
机构：
[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan
[2] Hokkaido Univ, Dept Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
[3] Tri Chem Lab, Yamanashi 4090112, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期
关键词：
GaAsNSb; GaAsNSe; multiple quantum well; negative differential resistance;
D O I：
10.1016/j.physe.2003.11.270
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Diodes with GaAsNSb/GaAs multiple quantum wells (MQWs) were gown on p-GaAs(001) substrates by metalorganic molecular-beam epitaxy. Negative differential resistance (NDR) characteristics were clearly observed at room temperature. The peak-to-valley current ratio was as high as 6 and the peak current density was similar to1.7 A/cm(2). The NDR characteristics were also observed for a GaAsNSe/GaAs MQW diode and a GaAsNSe-based tunnel junction diode. The mechanism of the observed NDR is discussed considering the band offsets in the nitrogen-related GaAsNSb/GaAs and GaAsNSe/GaAs MQWs. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：727 / 731
页数：5
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