Superconducting Density of States in B-Doped Diamond

被引:0
|
作者
Onufriienko, O. [1 ,2 ]
Samuely, T. [1 ,2 ]
Zhang, G. [3 ]
Vanacken, J. [3 ]
Xu, Zheng [4 ]
May, P. W. [5 ]
Szabo, P. [1 ,2 ]
Moshchalkov, V. V. [3 ]
Samuely, P. [1 ,2 ]
机构
[1] Slovak Acad Sci, Ctr Low Temp Phys, Inst Expt Phys, Watsonova 47, Kosice 04001, Slovakia
[2] Safarik Univ, Fac Sci, Kosice 04001, Slovakia
[3] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, Celestijnenlaan 200D, B-3001 Heverlee, Belgium
[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA
[5] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England
关键词
SCANNING TUNNELING MICROSCOPE; FILMS; TEMPERATURE;
D O I
10.12693/APhysPolA.131.1033
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the presented work, we investigated the superconducting boron doped diamond polycrystalline film prepared by chemical vapor deposition by means of scanning tunneling microscopy/spectroscopy. Differential conductance spectra measured at various temperatures were used to obtain the values of superconducting critical temperature and energy gap. Comparing various theoretical models fitted to the differential conductance spectra measured at 0.5 K suggests weak pair breaking. However, this cannot account for the high 2 Delta/k(B)T(C) ratio, which therefore indicates strong coupling.
引用
收藏
页码:1033 / 1035
页数:3
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