In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers

被引：24
|
作者：
Knorr, K
Pristovsek, M
ReschEsser, U
Esser, N
Zorn, M
Richter, W
机构：
[1] Technische Universität Berlin, Inst. fur Festkorperphysik, PN 6-1, Hardenbergstrasse 36
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期
关键词：
VAPOR-PHASE EPITAXY;
D O I：
10.1016/S0022-0248(96)00629-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A new process for chemical passivation of III-V semiconductor surfaces in metalorganic vapour phase epitaxy (MOVPE) is developed. A passivation layer is deposited directly after growth in the reactor. It consists of amorphous arsenic or a double-layer package of amorphous phosphorus and arsenic, which are grown by photo-decomposition of the group-V hydrides. These layers (caps) serve to protect the surfaces against contamination in air after removing the samples from the MOVPE growth reactor. Such passivation is applicable e.g. for a two-step epitaxy or for further surface characterizations.
引用
收藏
页码：230 / 236
页数：7
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