Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an Al0.4Ga0.6N/GaN heterostructure

被引：27

作者：

Hang, DR ^{[1
]}

Liang, CT

Juang, JR

Huang, TY

Hung, WK

Chen, YF

Kim, GH

Lee, JH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Sungkyunkwan Univ, Dept Elect & Elect Engn, Suwon 440746, South Korea

[3] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.1539286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the drastic enhancement pattern of Shubnikov-de Haas (SdH) oscillations observed in an AlGaN/GaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature is investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in many wide-band-gap heterostructures, in which moderate mobilities and heavier electron effective mass (rapidly damping SdH amplitudes) are frequently encountered. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements. (C) 2003 American Institute of Physics.

引用

页码：2055 / 2058

页数：4

共 9 条

[1] Microwave-modulated shubnikov-de Haas-like oscillations in an Al0.4Ga0.6N/GaN electron system
Juang, JR
Hang, DR
Lin, MG
Huang, TY
Kim, GH
Liang, CT
Chen, YF
Hung, WK
Seo, WH
Lee, Y
Lee, JH
CHINESE JOURNAL OF PHYSICS, 2004, 42 (05) : 629 - 635
[2] Demonstration of Rashba spin splitting in an Al0.25Ga0.75N/GaN heterostructure by microwave-modulated Shubnikov-de Haas oscillations
Cho, K. S.
Liang, C-T
Chen, Y. F.
Fan, J. C.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 870 - 874
[3] Conventional and microwave-modulated Shubnikov-de Haas oscillations in GaN electron systems
Juang, JR
Hang, DR
Huang, TY
Hung, WK
Chen, YF
Kim, GH
Lin, MG
Chen, TM
Liang, CT
Lee, Y
Lee, JH
Lee, JH
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 631 - 635
[4] Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas
Hang, DR
Juang, JR
Huang, TY
Liang, CT
Hung, WK
Chen, YF
Kim, GH
Lee, Y
Lee, JH
Lee, JH
Huang, CF
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (1-3): : 578 - 581
[5] Characteristics of Al0.4Ga0.6N/GaN heterostructure varactor diodes
Mutamba, K
Saglam, M
Sydlo, C
Megej, A
Hartnagel, HL
Daumiller, I
2004 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1AND 2, PROCEEDINGS, 2004, : 157 - 160
[6] Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors
Saglam, M
Mutamba, K
Megej, A
Sydlo, C
Hartnagel, HL
Daumiller, I
APPLIED PHYSICS LETTERS, 2003, 82 (02) : 227 - 229
[7] Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal-insulator-semiconductor structures
Chen, P
Chua, SJ
Wang, WD
Chi, DZ
Miao, ZL
Zheng, YD
JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) : 4702 - 4704
[8] Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation
Cui, L. J.
Zeng, Y. P.
Zhang, Y.
Zhou, W. Z.
Shang, L. Y.
Lin, T.
Chu, J. H.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 83 : 114 - 118
[9] Two-dimensional growth of AlN and GaN on lattice-relaxed Al0.4Ga0.6N buffer layers prepared with high-temperature-grown AlN buffer on sapphire substrates and fabrication of multiple-quantum-well structures
Ohba, Y
Sato, R
Kaneko, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (12A): : L1293 - L1296

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