Improvement of resistive switching in NiO-based nanowires by inserting Pt layers

被引：25
|
作者：
Huang, Yen-Chun [1 ]
Chen, Po-Yuan [2 ]
Chin, Tsung-Shune [3 ]
Liu, Ru-Shi [4 ]
Huang, Chao-Yuan [5 ]
Lai, Chih-Huang [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan
[3] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan
[4] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan
[5] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期
关键词：
TRANSITION-METAL OXIDES; NONVOLATILE MEMORY; ARRAYS; FILMS; NANOFILAMENTS; BEHAVIORS;
D O I：
10.1063/1.4758482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonpolar resistive switching is demonstrated in polycrystalline NiO-based nanowires. The lower switching voltages and narrower switching distributions are exhibited in multilayered NiO/Pt nanowires, compared to the monolithic NiO nanowires. The temperature dependence of resistance at low resistance state reveals the conduction is attributed to the hopping through percolation paths composed of oxygen-related defects. The inserted Pt layers behave as intermediate electrodes to reduce migration length of oxygen ions and to store the oxygen ions near the electrodes. Therefore, the localized formation/migration of oxygen ions confines the occurrence of percolation paths, leading to improvement of the switching parameters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758482]
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页数：4
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