Low-K, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings

被引：4

作者：

Ramirez, Joan Manel ^{[1
]}

Souleiman, Amin ^{[1
,2
]}

De La Horie, Pierre Fanneau ^{[1
]}

Neel, Delphine ^{[1
]}

Vaissiere, Nicolas ^{[1
]}

Ramez, Valentin ^{[3
]}

Besancon, Claire ^{[1
]}

Malhouitre, Stephane ^{[3
]}

Wilk, Arnaud ^{[1
]}

Merghem, Kamel ^{[2
]}

Decobert, Jean ^{[1
]}

Hassan, Karim ^{[1
,3
]}

Bitauld, David ^{[1
]}

机构：

[1] III V Lab, Ave Augustin Fresnel 1, F-91767 Palaiseau, France

[2] Inst Polytech Paris, Telecom SudParis, SAMOVAR, F-9112 Palaiseau, France

[3] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

来源：

OPTICS EXPRESS | 2022年 / 30卷 / 20期

基金：

欧盟地平线“2020”;

关键词：

MODULATION; GHZ; PLATFORM;

D O I：

10.1364/OE.469735

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (K < 40 cm-1) and a narrow linewidth of increment nu = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 231-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.

引用

页码：36717 / 36726

页数：10

共 14 条

[1] Design of chirped-coupling sidewall Bragg gratings for narrow linewidth distributed feedback lasers
Di Gaetano, Eugenio
Sorel, Marc
OPTICS LETTERS, 2019, 44 (07) : 1642 - 1645
[2] Modeling and analysis of narrow-linewidth distributed feedback lasers based on apodized laterally coupled gratings
Zhao, Yingming
Li, Yu
Huang, Weiping
APPLIED OPTICS, 2022, 61 (10) : 2610 - 2619
[3] Demonstration of a Discretely Tunable III-V/SOI Sampled Grating Distributed Feedback Laser
Dhoore, Soren
Li, Lianyan
Abbasi, Amin
Roelkens, Gunther
Morthier, Geert
2016 IEEE PHOTONICS CONFERENCE (IPC), 2016, : 542 - 543
[4] Narrow-linewidth surface-emitting distributed feedback semiconductor lasers with low threshold current
Hai, Yina
Zou, Yonggang
Ma, Xiaohui
Fan, Jie
Wang, Haizhu
Zhu, Ling
Shi, Linlin
OPTICS AND LASER TECHNOLOGY, 2021, 135
[5] High-Power, Narrow-Linewidth, and Low-Noise Quantum Dot Distributed Feedback Lasers
Wang, Shuai
Lv, Zun-Ren
Yang, Qiu-Lu
Wang, Sheng-Lin
Chai, Hong-Yu
Meng, Lei
Lu, Dan
Ji, Chen
Yang, Xiao-Guang
Yang, Tao
LASER & PHOTONICS REVIEWS, 2023, 17 (09)
[6] Narrow linewidth two-electrode 1560 nm laterally coupled distributed feedback lasers with third-order surface etched gratings
Dridi, Kais
Benhsaien, Abdessamad
Zhang, Jessica
Hinzer, Karin
Hall, Trevor J.
OPTICS EXPRESS, 2014, 22 (16): : 19087 - 19097
[7] Narrow-linewidth distributed feedback lasers with laterally-coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography
Dumitrescu, M.
Telkkala, J.
Karinen, J.
Viheriala, J.
Laakso, A.
Haring, K.
Viljanen, M. -R.
Paajaste, J.
Koskinen, R.
Suomalainen, S.
Lyytikainen, J.
Leinonen, T.
Pessa, M.
NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953
[8] Low-Threshold and Narrow Linewidth Two-Electrode MQW Laterally Coupled Distributed Feedback Lasers at 1550 nm
Dridi, Kais
Maldonado-Basilio, Ramon
Benhsaien, Abdessamad
Zhang, Xia
Hall, Trevor J.
2012 38TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATIONS (ECOC), 2012,
[9] Design of Laterally Index-Coupled Grating III-V on Thin-SOI Distributed Feedback Lasers
Loh, Ter-Hoe
Krishnamurthy, Vivek
Wang, Qian
IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (15) : 1624 - 1627
[10] NARROW LINEWIDTH 894 nm DISTRIBUTED FEEDBACK LASERS WITH LATERALLY-COUPLED RIDGE-WAVEGUIDE SURFACE GRATINGS FABRICATED USING NANOIMPRINT LITHOGRAPHY
Dumitrescu, M.
Telkkala, J.
Karinen, J.
Laakso, A.
Viheriala, J.
Leinonen, T.
Lyytikainen, J.
Toikkanen, L.
Pessa, M.
2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2010, : 131 - 141

← 1 2 →