Sub-terahertz testing of silicon MOSFET

被引：21

作者：

Stillman, W. ^{[1
]}

Veksler, D. ^{[1
]}

Elkhatib, T. A. ^{[1
]}

Salama, K. ^{[1
]}

Guarin, F. ^{[2
]}

Shur, M. S. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

[2] IBM Microelect, Hopewell Jct, NY 12533 USA

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 22期

关键词：

D O I：

10.1049/el:20089418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

引用

页码：1325 / U51

页数：2

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