Graphene/Rh(111) Structure Studied Using In-Situ Scanning Tunneling Microscopy

被引：2
|
作者：
Dong, Guo-Cai [2 ,3 ]
Baarle, D. V. [1 ]
Frenken, J. [1 ]
Tang, Qi-Wen [3 ]
机构：
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China
[3] Jiangnan Graphene Res Inst, Graphenes Growth Mech Res Lab, Changzhou 213149, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 11期
基金：
中国国家自然科学基金;
关键词：
CHEMICAL-VAPOR-DEPOSITION; GROWTH; SURFACES; RH(111); HETEROSTRUCTURES; SEGREGATION; RU(0001); KINETICS; FILMS;
D O I：
10.1088/0256-307X/33/11/116101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Scanning tunnel microscopy (STM) is performed to verify if an Rh 'nails' structure is formed accompanying the graphene growing during chemical vapor deposition. A structure of a graphene island in an Rh vacancy island is used as the start. While the graphene island is removed by oxygenation, the variations of the Rh vacancy island are imaged with an in-situ high-temperature STM. By fitting with our model and calculations, we conclude that the best fit is obtained for 0% Rh, i.e., for the complete absence of nails below graphene on Rh(111). That is, when graphene is formed on Rh(111), the substrate remains flat and does not develop a supporting nail structure.
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页数：3
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