Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

被引：15
|
作者：
Fegadolli, William S. [1 ,2 ]
Kim, Se-Heon [2 ]
Aitor Postigo, Pablo [3 ]
Scherer, Axel [1 ,2 ]
机构：
[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
[2] CALTECH, Dept Phys, Pasadena, CA 91125 USA
[3] IMM Inst Microelect Madrid CNM CSIC, PTM, E-28760 Madrid, Spain
来源：
OPTICS LETTERS | 2013年 / 38卷 / 22期
关键词：
WAVE-GUIDE; COMPACT; RESONATORS;
D O I：
10.1364/OL.38.004656
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of similar to 14.7 mu W. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(lambda/n)(3), is a promising and efficient light source for silicon photonics. (C) 2013 Optical Society of America
引用
收藏
页码：4656 / 4658
页数：3
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