The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

被引：3
|
作者：
Sankin, Vladimir [1 ]
Andrianov, Alexandr [1 ]
Petrov, Alexey [1 ]
Zakhar'in, Alexey [1 ]
Lepneva, Ala [1 ]
Shkrebiy, Pavel [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
关键词：
Terahertz emission; Natural superlattice; Bloch oscillations; Wannier-Stark localization; Transport in high electrical fields; SILICON-CARBIDE POLYTYPES; WANNIER-STARK LOCALIZATION; FIELD-INDUCED LOCALIZATION; SEMICONDUCTOR SUPERLATTICES; ELECTRIC-FIELD; 6H;
D O I：
10.1186/1556-276X-7-560
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices.
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页数：7
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