Fabrication of Solution Processed Thin Film Transistor Using Zinc Oxide Nanoparticles

被引：0
|
作者：
Lee, Sul [1 ]
Jeong, Sunho [1 ]
Kim, Dongjo [1 ]
Park, Bong-Kyun [1 ]
Moon, Jooho [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
来源：
IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved Vth by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.
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页码：703 / 706
页数：4
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