Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy

被引：5

作者：

Kim, S. M. ^{[1
,2
]}

Yuen, H. B. ^{[1
]}

Hatami, F. ^{[1
]}

Chin, A. ^{[3
]}

Harris, J. S. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Solid State & Photon Lab, Stanford, CA 94305 USA

[2] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA

[3] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 12期

关键词：

Infrared; narrow bandgap; quantum dots; quantum wells; molecular beam epitaxy;

D O I：

10.1007/s11664-008-0472-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth and characterization of a new dilute nitride infrared material: InN(As)Sb. InNAsSb single quantum wells (SQWs) and InNSb self-assembled quantum dots (QDs) were grown on both InAs and GaAs substrates by solid-source molecular beam epitaxy. High-quality InNAsSb epilayers were realized by optimizing the nitrogen incorporation growth conditions. Both secondary-ion mass spectroscopy and x-ray diffraction measurements confirmed a nitrogen incorporation of 1%. Temperature- and power-dependent photoluminescence measurements were conducted and revealed a luminescence emission at 4.03 mu m from localized states and similar to 4.3 mu m from the ground-state transition in InNAsSb SQWs. InNSb QDs exhibited a 10 K photoluminescence peak at 3.6 mu m.

引用

页码：1774 / 1779

页数：6

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