Low-energy bands, optical properties, and spin/valley-Hall conductivity of silicene and germanene

被引:13
|
作者
Pham Thi Huong [1 ,2 ]
Do Muoi [3 ]
Phuc, Huynh, V [4 ]
Nguyen, Chuong, V [5 ]
Hoa, Le T. [6 ,7 ]
Hoi, Bui D. [8 ]
Hieu, Nguyen N. [6 ,7 ]
机构
[1] Ton Duc Thang Univ, Inst Computat Sci, Div Computat Math & Engn, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Environm & Labour Safety, Ho Chi Minh City, Vietnam
[3] Univ Sci VNUHCM, Dept Phys & Engn Phys, Ho Chi Minh City, Vietnam
[4] Dong Thap Univ, Div Theoret Phys, Cao Lanh 870000, Vietnam
[5] Le Quy Don Tech Univ, Dept Mat Sci & Engn, Hanoi, Vietnam
[6] Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam
[7] Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam
[8] Hue Univ, Univ Educ, Dept Phys, Hue, Vietnam
关键词
29;
D O I
10.1007/s10853-020-05044-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we study systematically low-energy bands, optical absorbance and spin/valley-Hall conductivity of silicene and germanene in the presence of a perpendicular electric field. Our analytical calculations indicate that both silicene and germanene are semiconductors with a tiny energy gap and we can control their energy gap by the perpendicular electric field. Our calculations also demonstrate that the low-frequency optical absorbance of silicene is much greater than that of germanene and the external electric field plays an important role in determining the optical absorption peaks. When the Fermi level is in the forbidden band, the Hall conductivity is quantized, while spin/valley-Hall conductivities of both silicene and germanene depend strongly on the Fermi energy when the Fermi level is in the conduction band. Analytical results for spin/valley-Hall conductivities of silicene and germanene are presented in detail in this work.
引用
收藏
页码:14848 / 14857
页数:10
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