Conduction-band structure of Bi2-xSbxSe3 mixed crystals by Shubnikov-de Haas and cyclotron resonance measurements in high magnetic fields

被引:69
|
作者
Kulbachinskii, VA [1 ]
Miura, N
Nakagawa, H
Arimoto, H
Ikaida, T
Lostak, P
Drasar, C
机构
[1] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119899, Russia
[2] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo, Japan
[3] Univ Paraducice, Pardubice 53210, Czech Republic
关键词
D O I
10.1103/PhysRevB.59.15733
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The conduction-band structure of single crystals Bi2-xSbxSe3 (0 less than or equal to x less than or equal to 0.52) was investigated in high magnetic fields by the Shubnikov-de Haas (SdH) effect (up to 40 T) and cyclotron resonance (up to 150 T). Signals from two conduction bands were detected in both experiments. The anisotropy of the Fermi surface and the effective masses for magnetic fields B parallel to c and B perpendicular to c were determined for different x. It was found that the cyclotron masses for B parallel to c in the upper and lower conduction bands do not depend on temperature or electron concentration. The temperature dependence of the resistivity, the Hall effect, and the Seebeck coefficient. have been measured as functions of Sb concentration x. The free-electron concentration was found to be suppressed by the incorporation of Sb into Bi2Se3 crystals. [S0163-1829(99)03623-1].
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页码:15733 / 15739
页数:7
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