Defects in zinc oxide grown by pulsed laser deposition

被引：4
|
作者：
Ling, Francis C. C. [1 ]
Wang, Zilan [1 ]
Ho, Lok Ping [1 ]
Younas, M. [1 ]
Anwand, W. [2 ]
Wagner, A. [2 ]
Su, S. C. [3 ]
Shan, C. X. [4 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Helmholtz Zentrum Dresden Rossendorf, Inst Radiat Phys, D-01328 Dresden, Germany
[3] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2016年 / 480卷
关键词：
ZnO; Pulsed laser deposition; Zn-vacancy; Green luminescence; Near band edge emission; Positron annihilation spectroscopy; EMISSION;
D O I：
10.1016/j.physb.2015.09.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (similar to 2.4-2.5 eV) and the near band edge (NBE) emission at 3.23 eV. (C) 2015 Elsevier B.V. All rights reserved.
引用
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页码：2 / 6
页数：5
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