Simulation of the early stages of thermal SiO2 growth

被引：0
|
作者：
Plucinski, KJ [1 ]
机构：
[1] Mil Univ Technol, Dept Elect, PL-00908 Warsaw, Poland
来源：
EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1999年 / 3725卷
关键词：
MIS devices; insulator-semiconductor interfaces;
D O I：
10.1117/12.344733
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The kinetics of the silicon oxidation was analyzed based on the fractal mechanism of oxidation. The transport of the oxidants through consolidated region was solved based on continuous equation. Confirmation was made to some reported experimental observations.
引用
收藏
页码：196 / 200
页数：5
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