Temperature-dependent terahertz radiation from the surfaces of narrow-gap semiconductors illuminated by femtosecond laser pulses

被引：3
|
作者：
Molis, G. [1 ]
Adomavicius, R. [1 ]
Krotkus, A. [1 ]
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01800 Vilnius, Lithuania
来源：
PHYSICA B-CONDENSED MATTER | 2008年 / 403卷 / 19-20期
关键词：
Terahertz; CdHgTe; InSb; InAs; THz; Temperature;
D O I：
10.1016/j.physb.2008.07.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and CdxHg1-xTe is presented. In the case of Cd0.2Hg0.8Te increase up to 15-17 times has been observed, when cooling the sample from the room temperature to close to liquid-helium temperatures, and THz emission from this material becomes comparable to that of p-InAs emitter. This effect was explained in terms of the increased photoexcited electron excess energy due to the positive temperature coefficient for energy bandgap of CdxHg1-xTe, as well as by weaker surface field screening and carrier-carrier scattering. Temperature-dependent modification of the shape of THz pulses emitted from InSb surfaces has been observed and attributed to plasma oscillation of the cold electrons. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3786 / 3788
页数：3
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