Modulation-doped InGaAlAs/InP semiconductor optical amplifier structures grown by molecular beam epitaxy

被引：2
|
作者：
Feng, DJ [1 ]
Chiu, CL [1 ]
Lin, EY [1 ]
Lay, TS [1 ]
Cang, TY [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4A期
关键词：
SOA; multiple quantum wells; modulation doping; refractive index; electro-absorption;
D O I：
10.1143/JJAP.45.2426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconductor optical amplifier (SOA) structures have been designed and grown by molecular beam epitaxy for multifunctional integration of 1.55-mu m photonic devices on InP. Triple n-type modulation-doped, strain-balanced compact quantum wells (QWs) are designed to provide desirable gain characteristics under forward bias and clean index changes under reverse bias. The largest refractive index changes with low levels of electroabsorption have been obtained for a sample with modulation doping of 4.27 x 10(11) cm(-2) per QW and with a hole-stopping barrier.
引用
收藏
页码：2426 / 2429
页数：4
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