Effects of substrate temperature on tin-doped indium oxide films deposited by dc arc discharge ion plating

被引：10

作者：

Omoto, Hideo ^{[1
]}

Takamatsu, Atsushi ^{[1
]}

Kobayashi, Takashi ^{[1
]}

机构：

[1] Cent Glass Co Ltd, Glass Res Ctr, Matsusaka, Mie 5150001, Japan

来源：

VACUUM | 2006年 / 80卷 / 07期

关键词：

ITO; tin-doped indium oxide; dc arc discharge ion plating; low-temperature process; low resistivity;

D O I：

10.1016/j.vacuum.2005.11.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) films were deposited on glass substrate at temperatures ranging from room temperature to 120 degrees C by the dc are discharge ion plating technique. The electrical properties and crystallinity of ITO films were investigated. The resistivity of ITO films decreased with the increase of the substrate temperature in deposition, mostly due to increase in Hall mobility above 90 degrees C. The resistivity of ITO film obtained at temperature 120 degrees C was 1.33 x 10(-4) Omega cm. The ITO films crystallized at the substrate temperature higher than 90 degrees C and the grain size estimated from the (2 2 2) peak in the direction parallel to the surface of the substrate became large with the increase of the substrate temperature. That the Hall mobility increased with the increase of the substrate temperature was speculated to be due to the increase of the grain size in the direction parallel to the surface. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：783 / 787

页数：5

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