Novel metal gates for high κ applications

被引：3

作者：

Chang, Mei ^{[1
]}

Chen, Michael S. ^{[1
]}

David, Anais ^{[2
]}

Gandikota, Srinivas ^{[1
]}

Ganguli, Seshadri ^{[1
]}

Hayden, Brian E. ^{[2
]}

Hung, Steven ^{[1
]}

Lu, Xinliang ^{[1
]}

Mormiche, Claire ^{[2
]}

Noori, Atif ^{[1
]}

Smith, Duncan C. A. ^{[2
]}

Vian, Chris J. B. ^{[2
]}

机构：

[1] Appl Mat Inc, Sunnyvale, CA 94085 USA

[2] Ilika Technol, Southampton SO16 7NS, Hants, England

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 03期

关键词：

HF; DEPOSITION; OXIDES; XPS;

D O I：

10.1063/1.4780447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of gate systems suitable for high kappa dielectrics is critical to the advancement of complementary metal-oxide-semiconductor (CMOS) devices. Both the effective work function and material stability are key parameters to these systems. A systematic study of metal gates of the composition HfxSi1-x (0.25 <= x <= 1) is demonstrated here, including XPS, XRD and four point probe measurements. The effective work function of each material is evaluated and it is shown that it can be tuned from 4.5 to less than 4.0 eV. Suitable work functions for n-channel metal-oxide-semiconductor applications (4.05 +/- 0.2 eV) were achieved using hafnium rich compositions; however, XPS and diffraction measurements confirmed that these materials demonstrated a high propensity to oxidise, causing the reduction of the underlying oxides, making them unsuitable for commercial application. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4780447]

引用

页数：6

共 50 条

[1] High-K materials and metal gates for CMOS applications
Robertson, John
Wallace, Robert M.
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2015, 88 : 1 - 41
[2] Process technology - High K with metal gates
Toshiba Corporation
不详
Tech. Dig. Int. Electron Meet. IEDM, 2006,
[3] Progress toward metal gates, high-k
不详
SOLID STATE TECHNOLOGY, 2006, 49 (02) : 26 - +
[4] Applications of novel metal powders
Kellie, JLF
Wood, JV
POWDER METALLURGY, 2000, 43 (02) : 105 - 108
[5] High-k/Metal Gates in the 2010s
James, Dick
2014 25TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2014, : 431 - 438
[6] Effects of high-κ dielectrics on the workfunctions of metal and silicon gates
Yeo, YC
Ranade, P
Lu, Q
Lin, R
King, TJ
Hu, CM
2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 49 - 50
[7] Current Status of High-k and Metal Gates in CMOS
Wilk, G. D.
Verghese, M.
Chen, P. J.
Maes, J-W.
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10, 2012, 50 (04): : 207 - 210
[8] High-k/Metal gates - From research to reality
Narayanan, V.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 41 - 45
[9] The past, present and future of high-k/metal gates
Choi, Kisik
Ando, Takashi
Cartier, Eduard
Kerber, Andreas
Paruchuri, Vamsi
Iacoponi, John
Narayanan, Vijay
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 3, 2013, 53 (03): : 17 - 26
[10] Novel Circuit Technique for High-speed ECL Gates
Ishii, Kiyoshi
Suzuki, Katsuya
Sugimoto, Yoshihiro
2009 JOINT IEEE NORTH-EAST WORKSHOP ON CIRCUITS AND SYSTEMS AND TAISA CONFERENCE, 2009, : 89 - 92

← 1 2 3 4 5 →