Influence of peripheral vibrations and traveling magnetic fields on VGF growth of Sb-doped Ge crystals

被引：5
|
作者：
Dropka, Natasha [1 ]
Frank-Rotsch, Christiane [1 ]
Rudolph, Peter [2 ]
机构：
[1] Leibniz Inst Crystal Growth IKZ, Max Born Str 2, D-12489 Berlin, Germany
[2] Crystal Technol Consulting, Helga Hahnemann Str 57, D-12529 Schonefeld, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2016年 / 453卷
关键词：
Computer simulation; Fluid flows; Magnetic fields; Single crystal growth; Stirring; Semiconducting germanium; VERTICAL GRADIENT FREEZE; SINGLE-CRYSTALS; CDTE;
D O I：
10.1016/j.jcrysgro.2016.07.040
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We performed 3D numerical and experimental studies to assess the potential of peripheral low frequency mechanical vibrations for improving the homogeneity of Sb-doped 4 '' Ge crystals grown by vertical gradient freeze (VGF). For this study, a novel bell-shaped graphite vibrator was developed for the generation of the axial vibrations in the direction of three-phase junction. Melt stirring by downward traveling magnetic field (TMF) was used as a benchmark. The results showed superiority of peripheral vibrations to TMF stirring concerning radial and longitudinal doping distribution and initial stirring rate. Experimentally observed standing free surface waves in Ge were caused by shielding effect of the vibrator on TMF. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：27 / 33
页数：7
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