Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

被引：4
|
作者：
Ghosh, A. [1 ]
Ghosh, K. K. [1 ]
机构：
[1] Ctr Sci Educ & Res, Kolkata 700094, W Bengal, India
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期
关键词：
Monte Carlo simulations; excess noise; heterojunction; avalanche; dead space; ionization probability;
D O I：
10.1007/s11082-008-9238-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to agree well with the reports of other theoretical predictions and experimental results published in literatures.
引用
收藏
页码：439 / 446
页数：8
相关论文
共 50 条
  • [1] Monte Carlo simulation of excess noise in heterojunction avalanche photodetector
    Ghosh, A.
    Ghosh, K. K.
    NUSOD '07: PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2007, : 41 - +
  • [2] Monte Carlo simulation of excess noise in heterojunction avalanche photodetector
    A. Ghosh
    K. K. Ghosh
    Optical and Quantum Electronics, 2008, 40 : 439 - 446
  • [3] Avalanche multiplication and excess noise factor of heterojunction avalanche photodiodes
    You, A. H.
    Low, L. C.
    Cheang, P. L.
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 324 - +
  • [4] Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions
    Ma, F
    Wang, S
    Li, X
    Anselm, KA
    Zheng, XG
    Holmes, AL
    Campbell, JC
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4791 - 4795
  • [5] Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes
    Zhao, Chengcheng
    Huang, Jianliang
    Zhang, Yanhua
    Huang, Wenjun
    Nie, Biyin
    Cao, Yulian
    Ma, Wenquan
    SOLID STATE COMMUNICATIONS, 2019, 301
  • [6] Monte Carlo estimation of excess noise factor in thin p+-i-n+ avalanche photodiodes
    Ong, DS
    Li, KF
    Rees, GJ
    Dunn, GM
    David, JPR
    Robson, PN
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 631 - 634
  • [7] Monte Carlo estimation of excess noise factor in thin p+-i-n+ avalanche photodiodes
    Ong, DS
    Li, KF
    Rees, GJ
    Dunn, GM
    David, JPR
    Robson, PN
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 631 - 634
  • [8] Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model
    Mun, S. C. Liew Tat
    Tan, C. H.
    Goh, Y. L.
    Marshall, A. R. J.
    David, J. P. R.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (01)
  • [9] Monte Carlo simulation of a prototype photodetector used in radiotherapy
    Kausch, C
    Cremers, F
    Albers, D
    Schmidt, R
    Schreiber, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 442 (1-3): : 53 - 57
  • [10] Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel
    Gruzinskis, V.
    Shiktorov, P.
    Starikov, E.
    ACTA PHYSICA POLONICA A, 2011, 119 (02) : 215 - 217
12345