共 3 条
Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties
被引:19
|作者:
Thomas, Joseph P.
[1
,3
]
Chen, Huang-Chin
[3
]
Tseng, Shih-Hao
[1
]
Wu, Hung-Chi
[1
]
Lee, Chi-Young
[1
]
Cheng, Hsiu Fung
[2
]
Tai, Nyan-Hwa
[1
]
Lin, I-Nan
[3
]
机构:
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[3] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
关键词:
c-diamond;
n-diamond;
silicon nanoneedles;
chemical vapor deposition;
electron field emission;
ULTRANANOCRYSTALLINE DIAMOND;
ELECTRON-EMISSION;
NUCLEATION SITE;
NANOWIRES;
DENSITY;
METAL;
D O I:
10.1021/am3016203
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 degrees C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
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页码:5103 / 5108
页数:6
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