Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

被引:19
|
作者
Thomas, Joseph P. [1 ,3 ]
Chen, Huang-Chin [3 ]
Tseng, Shih-Hao [1 ]
Wu, Hung-Chi [1 ]
Lee, Chi-Young [1 ]
Cheng, Hsiu Fung [2 ]
Tai, Nyan-Hwa [1 ]
Lin, I-Nan [3 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[3] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
关键词
c-diamond; n-diamond; silicon nanoneedles; chemical vapor deposition; electron field emission; ULTRANANOCRYSTALLINE DIAMOND; ELECTRON-EMISSION; NUCLEATION SITE; NANOWIRES; DENSITY; METAL;
D O I
10.1021/am3016203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 degrees C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
引用
收藏
页码:5103 / 5108
页数:6
相关论文
共 3 条
  • [1] Field-emission properties of diamond grains grown on textured Fe/Si substrates
    Hirakuri, KK
    Kurata, T
    Mutsukura, N
    Friedbacher, G
    Ohuchi, M
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 2026 - 2030
  • [2] Field emission measurements from carbon films of a predominant nano-crystalline diamond character grown by energetic species
    Shpilman, Z.
    Michaelson, Sh.
    Kalish, R.
    Hoffman, A.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 846 - 849
  • [3] Enhanced field emission properties from well-aligned zinc oxide nanoneedles grown on the Au/Ti/n-Si substrate
    Park, Chan Jun
    Choi, Duck-Kyun
    Yoo, Jinkyoung
    Yi, Gyu-Chul
    Lee, Cheol Jin
    APPLIED PHYSICS LETTERS, 2007, 90 (08)