An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors

被引：2
|
作者：
Gomez-Campos, F. M. [1 ]
Rodriguez-Bolivar, S. [1 ]
Carceller, J. E. [1 ]
机构：
[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2004年 / 3卷 / 3-4期
关键词：
hole transport; ionized impurity scattering; non-parabolicity; warping; degeneracy; Monte Carlo;
D O I：
10.1007/s10825-004-7070-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work proposes an efficient technique for calculating the final state of holes after an ionized impurity scattering when the main features of the valence bands in Si and Ge, such as anisotropy, non-parabolicity and degeneracy, are taken into consideration. With this in mind we investigated the ionized impurity scattering within the Brooks-Herrings formalism and within the framework of effective mass theory, using a simplified model for the valence band.
引用
收藏
页码：329 / 332
页数：4
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