Experimental Evidence of Multiple Diffusion Mechanisms in Thin-Film Cu(In, Ga)Se2

被引：6
|
作者：
Biderman, N. J. [1 ,2 ]
Novak, Steven W. [1 ,2 ]
Laursen, T. [1 ,2 ]
Sundaramoorthy, R. [1 ,2 ]
Haldar, Pradeep [1 ,2 ]
Lloyd, J. R. [1 ,2 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci, Polytech Inst, Albany, NY 12203 USA
[2] SUNY Albany, Coll Engn, Polytech Inst, Albany, NY 12203 USA
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期
关键词：
Activation energy; cadmium; diffusion processes; grain boundaries; grain size; photovoltaic cells; thin films; GRAIN-BOUNDARY; SIMS; CU;
D O I：
10.1109/JPHOTOV.2015.2459911
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Lattice and grain boundary diffusions of cadmium in copper indium gallium diselenide (Cu(In, Ga)Se-2 or CIGS) thin films were investigated by annealing cadmium into samples of 700-nm CIGS thickness at temperatures between 250 and 300 degrees C. Diffusion profiles of cadmium were analyzed by dual-beam time-of-flight secondary ion mass spectroscopy (TOF-SIMS). In addition to fast cadmium grain boundary diffusion, experiments revealed cadmium diffusion profiles with two distinct lattice diffusion stages, which could be indicative of simultaneous vacancy and dissociative diffusion mechanisms.
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页码：1497 / 1502
页数：6
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