Thermoelectric properties of SiO2/SiO2+CoSb multi-nanolayered thin films modified by MeV Si ions

被引：6

作者：

Budak, Satilmis ^{[1
]}

Smith, Cydale ^{[2
]}

Muntele, Claudiu ^{[3
]}

Chhay, Bopha ^{[2
]}

Heidary, Kaveh ^{[1
]}

Johnson, Ralph B. ^{[4
]}

Ila, Daryush ^{[5
]}

机构：

[1] Alabama A&M Univ, Dept Elect Engn & Comp Sci, Normal, AL 35762 USA

[2] Res Inst, Ctr Irradiat Mat, Normal, AL USA

[3] Cygnus Sci Serv, Huntsville, AL USA

[4] Alabama A&M Univ, Dept Phys, Normal, AL 35762 USA

[5] Fayetteville State Univ, Dept Chem & Phys, Fayetteville, NC USA

来源：

JOURNAL OF INTELLIGENT MATERIAL SYSTEMS AND STRUCTURES | 2013年 / 24卷 / 11期

基金：

美国国家科学基金会;

关键词：

Ion bombardment; thermoelectric properties; optical properties; multi-nanolayers; Rutherford backscattering spectroscopy; figure of merit; NANO-LAYERS; BOMBARDMENT;

D O I：

10.1177/1045389X12470302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated the thermoelectric generator devices from 100 alternating layers of SiO2/SiO2+CoSb superlattice thin films using the ion beam-assisted deposition. Rutherford backscattering spectrometry was used for quantitative elemental analysis of Si, Co, and Sb in the multilayer films. The thin films were then modified by 5-MeV Si ion bombardments using the Alabama A&M University Pelletron ion beam accelerator. Quantum dots and/or clusters were produced in the nanolayered superlattice films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient, and the cross-plane electrical conductivity. We have characterized the thermoelectric generator devices before and after Si ion bombardments using the thermoelectric, optical, and surface characterization techniques. The optical absorption amplitude decreased when the first fluence of 1 x 10(12) ions/cm(2) was introduced from the value of 2.8 to about 1.9 at 200 nm. The figure of merit reached the maximum value of about 0.005 at the fluence of 1 x 10(13) ions/cm(2).

引用

页码：1350 / 1356

页数：7

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