Transition-metal dichalcogenide heterostructure solar cells: a numerical study

We evaluate the tunneling short-circuit current density in a p-i-n solar cell in which the transition metal dichalcogenide heterostructure ( superlattice) is embedded in the intrinsic i region. The effects of varying well and barrier widths, Fermi energy levels and number of quantum wells in the i region on are examined. A similar analysis is performed for the thermionic current that arises due to the escape and recapture of charge carriers between adjacent potential wells in the i-region. The interplay between and in the temperature range (300-330 K) is examined. The thermionic current is seen to exceed the tunneling current considerably at temperatures beyond 310 K, a desirable attribute in heterostructure solar cells. This work demonstrates the versatility of monolayer transition metal dichalcogenides when utilized as fabrication materials for van der Waals heterostructure solar cells.