Development of Anhydride-based NCFs for Cu/Sn-Ag Eutectic Bonding and Process Optimization for Fine Pitch TSV Chip Stacking

被引:0
|
作者
Shin, Ji-Won [1 ]
Choi, Yong-Won [1 ]
Kim, Young Soon [1 ]
Kang, Un Byung [2 ]
Jee, Young Kun [2 ]
Hwang, Ji Hwan [2 ]
Paik, Kyung-Wook [1 ]
机构
[1] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Taejon, South Korea
[2] Samsung Elect Co Ltd, Semicond Business, Semicond R&D Ctr, Package Dev team, Suwon, South Korea
关键词
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Methyl tetrahydrophthalic anhydride (MeTHPA), and Methyl hexahydrophthalic anhydride (MeHHPA) were added as curing agent for bisphenol A/phenoxy resin-based non-conductive film (NCF). Only NCF with MeTHPA showed thermal stability and void-less interface at 250 degrees C, and addition of 0.5 wt% of latent curing accelerator showed minimum NCF cure at pre-bonding stage (120 degrees C) and full NCF cure after main-bonding stage (250 degrees C). The formulated NCF were applied to TSV chip on substrate bonding with Cu/Sn-Ag double bump to Cu pad joint structure. Film thickness and bonding pressure were optimized at 15 mu m and 2.4 MPa to form state-of-art joint structure with optimal fillet shape. The joint structures were observed to be stable even after three reliability tests: high temperature storage test (HTST) of 200 hours, pressure cooker test (PCT) of 24 hours, and thermal cycle (T/C) of 200 cycles. Anhydride-based NCF showed stable joints due to flux-ability of anhydride; however, conventional dicyan diamide (DICY) based NCF showed broken joints after T/C due to lack of flux-ability.
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页码:31 / 35
页数:5
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