Approach to Defect-Free Lifetime and High Electron Density in CdTe

被引：3

作者：

Swain, S. K. ^{[1
]}

Duenow, J. N. ^{[2
]}

Johnston, S. W. ^{[2
]}

Amarasinghe, M. ^{[2
]}

McCoy, J. J. ^{[1
]}

Metzger, W. K. ^{[2
]}

Lynn, K. G. ^{[1
]}

机构：

[1] Washington State Univ, Ctr Mat Res, Pullman, WA 99164 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 07期

关键词：

n-type CdTe; time resolved photoluminescence; carrier density; life time; SURFACE RECOMBINATION; COMPENSATION; INCLUSIONS;

D O I：

10.1007/s11664-019-07190-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Achieving simultaneously high carrier density and lifetime is important for II-VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 10(18)cm(-3) was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

引用

页码：4235 / 4239

页数：5

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