High-sensitivity NO2 sensor based on n-type InP epitaxial layers

被引：0
|
作者：
Wierzbowska, Katarzyna
Adamowicz, Boguslawa
Mazet, Lionel
Brunet, Jerome
Pauly, Alain
Bideux, Luc
Varenne, Christelle
Laure, Berry
Germain, Jean-Paul
机构：
[1] Silesian Tech Univ, Dept Appl Phys, Inst Phys, PL-44100 Gliwice, Poland
[2] Univ Clermont Ferrand, LASMEA, Clermont Ferrand, France
来源：
OPTICA APPLICATA | 2005年 / 35卷 / 03期
关键词：
indium phosphide; epitaxial layers; gas sensors; resistance; surface states; computer simulations; SEMICONDUCTOR INTERFACES; INSULATOR-SEMICONDUCTOR; GAS SENSORS; OXIDES; MODEL;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The structure and sensing properties of a novel resistive NO2 sensor based on n-type InP epitaxial layers have been presented. The studies of sensor resistance changes due to adsorbed gas NO2 under exposures in the range from 20 to 100 ppb at a temperature of 80 degrees C were performed. The thickness of the active InP layer changed from 0.2 to 0.4 mu m. The response time and signal stability were also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of the resistance relative changes was shown from numerical simulations. The analysis, of the measured photoelectron spectroscopy (XPS) spectra confirmed the complex chemical composition of the InP oxides, which gives rise to the high density of surface states.
引用
收藏
页码：655 / 662
页数：8
相关论文
共 50 条
  • [1] NO2 sensor based on InP epitaxial thin layers
    Battut, V
    Blanc, JP
    Goumet, E
    Soulière, V
    Monteil, Y
    THIN SOLID FILMS, 1999, 348 (1-2) : 266 - 272
  • [2] NO2 sensitivity of thin n-InP epitaxial layers
    Talazac, L.
    Blanc, J.P.
    Battut, V.
    Mollot, F.
    Electron Technology (Warsaw), 2000, 33 (01): : 213 - 216
  • [3] High-sensitivity fiber SPR strain sensor based on n-type structure
    Wei, Yong
    Ren, Puxi
    Liu, Chunlan
    Tang, Yixiong
    Zhang, Ziqiang
    Liu, Chunbiao
    Shi, Chen
    Liu, Zhihai
    OPTICS LETTERS, 2023, 48 (19) : 5057 - 5060
  • [4] HIGH-TEMPERATURE MOBILITY OF PURE N-TYPE INP EPITAXIAL LAYERS
    BENZAQUEN, M
    WALSH, D
    MAZURUK, K
    PHYSICAL REVIEW B, 1987, 36 (08): : 4388 - 4393
  • [5] NO2 detection by a resistive device based on n-InP epitaxial layers
    Talazac, L
    Blanc, JP
    Germain, JP
    Pauly, A
    SENSORS AND ACTUATORS B-CHEMICAL, 1999, 59 (2-3) : 89 - 93
  • [6] SPECTRAL SENSITIVITY OF N-TYPE INP
    KOVALEVS.GG
    NASLEDOV, DN
    SIUKAEV, NV
    SLOBODCH.SV
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 377 - &
  • [7] NON-DESTRUCTIVE CHARACTERIZATION OF N-TYPE INP EPITAXIAL LAYERS BY INFRARED REFLECTIVITY MEASUREMENTS
    PICKERING, C
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (02) : 213 - 223
  • [8] IMPURITY AVALANCHE BREAKDOWN IN N-TYPE INP LAYERS
    OSWALD, J
    KAREL, F
    PETRICEK, O
    SCHMID, N
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : 112 - 115
  • [9] A high-sensitivity hydrogen sensor based on a Pd/InP Schottky diode structure
    Pan, HJ
    Liu, WC
    Yu, KH
    Wang, WC
    Feng, SC
    Shih, HJ
    COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII), 2000, 2000 (01): : 276 - 281
  • [10] High-sensitive room-temperature NO2 sensor based on a soluble n-type phthalocyanine semiconductor
    Dong, Zhen
    Kong, Xia
    Wu, Yanling
    Zhang, Jinfu
    Chen, Yanli
    INORGANIC CHEMISTRY COMMUNICATIONS, 2017, 77 : 18 - 22
12345