Strain relaxation in GaN nanopillars

被引：26

作者：

Tseng, W. J. ^{[1
,2
]}

Gonzalez, M. ^{[1
]}

Dillemans, L. ^{[2
]}

Cheng, K. ^{[1
]}

Jiang, S. J. ^{[1
,2
]}

Vereecken, P. M. ^{[1
,3
]}

Borghs, G. ^{[1
,2
]}

Lieten, R. R. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Ctr Surface Chem & Catalysis, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期

基金：

比利时弗兰德研究基金会;

关键词：

LIGHT-EMITTING-DIODES; STATE; SURFACE;

D O I：

10.1063/1.4772481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate the direct measurement of the strain state at the surface of nanostructures by in-plane X-ray diffraction. GaN tapered nanopillars have been fabricated by dry etching of a highly strained epilayer. The strain of the surface as function of pillar height shows an exponential relaxation which can be described by a single relaxation parameter. Additionally, we have simulated the strain relaxation and distribution of nanopillars. The impact of the pillar geometry on the strain relaxation has been discussed. In agreement with the measurements, an exponential relaxation of the strain is observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772481]

引用

页数：4

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