Direct comparison of anisotropic magnetoresistance and planar Hall effect in epitaxial Fe3O4 thin films

被引：20
|
作者：
Hu, C. R.
Zhu, J.
Chen, G.
Li, J. X.
Wu, Y. Z. [1 ]
机构：
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
来源：
PHYSICS LETTERS A | 2012年 / 376卷 / 45期
关键词：
Anisotropic magnetoresistance; Planar Hall effect; Magnetite; MAGNETITE; ALLOYS;
D O I：
10.1016/j.physleta.2012.08.009
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The angular dependence of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) were studied as a function of temperatures from the same epitaxial Fe3O4 film on MgO(001) substrates. The PHE contains only a twofold angular dependence, but the AMR below 200 K is constituted with both twofold and fourfold symmetric terms. Our results also prove that the origin of the fourfold symmetry of AMR is related to the lattice symmetry rather than the spin scattering near the antiphase boundaries. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：3317 / 3321
页数：5
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