Optical Aharonov-Bohm oscillations in InGaAs quantum wells

被引：4
|
作者：
Schweidenback, L. [1 ]
Ali, T. [1 ]
Russ, A. H. [1 ]
Murphy, J. R. [1 ]
Cartwright, A. N. [1 ]
Petrou, A. [1 ]
Li, C. H. [2 ]
Yakes, M. K. [2 ]
Kioseoglou, G. [2 ,4 ]
Jonker, B. T. [2 ]
Govorov, A. [3 ]
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[4] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece
来源：
PHYSICAL REVIEW B | 2012年 / 85卷 / 24期
基金：
美国国家科学基金会;
关键词：
DOTS; DYNAMICS; CARRIERS; SPECTRA;
D O I：
10.1103/PhysRevB.85.245310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The intensity of photoluminescence emission in InGaAs/GaAs quantum wells (QWs) exhibits local maxima as a function of magnetic field applied perpendicular to the QW plane at low temperatures. These maxima are attributed to the optical Aharonov-Bohm effect associated with spatially indirect excitons that are formed in the vicinity of indium-rich InGaAs islands within the QW. Analysis of the data yields the radius of the exciton. The exciton linewidth also oscillates with the magnetic field and exhibits maxima that are shifted slightly to higher field values than those of the luminescence intensity maxima.
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页数：5
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