Superconductivity enhanced by Se doping in Eu3Bi2(S, Se) 4F4

被引：21
|
作者：
Zhang, P. [1 ,2 ]
Zhai, H. F. [1 ,2 ]
Tang, Z. J. [1 ,2 ]
Li, L. [3 ]
Li, Y. K. [3 ]
Chen, Q. [1 ,2 ]
Chen, J. [1 ,2 ]
Wang, Z. [1 ,2 ]
Feng, C. M. [1 ,2 ]
Cao, G. H. [1 ,2 ,3 ,4 ]
Xu, Z. A. [1 ,2 ,3 ,4 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[3] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
[4] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
EPL | 2015年 / 111卷 / 02期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1209/0295-5075/111/27002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated the negative-chemical-pressure effect of Eu3Bi2S4-xSexF4 (0 <= x <= 2.0) by the partial substitution of S with Se. The crystalline lattice substantially expands as Se is doped, suggesting an effective negative chemical pressure. With Se/S doping, the charge-density-wave-like anomaly is suppressed, and meanwhile the superconducting transition temperature (T-c) is enhanced. For x = 2.0, T-c reaches 3.35K and bulk superconductivity is confirmed by the strong diamagnetic signal, with shielding volume fraction over 90%. Magnetic-susceptibility, specific-heat and Hall-effect measurements reveal that the Se/S doping increases the carrier density, corresponding to the increase of the average Eu valence. Our work provides a rare paradigm of negative-chemical-pressure effect. Copyright (C) EPLA, 2015
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页数：6
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