Particle growth kinetics in silane RF discharges

被引:50
|
作者
Shiratani, M [1 ]
Fukuzawa, T [1 ]
Watanabe, Y [1 ]
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect Device Engn, Fukuoka 8128581, Japan
关键词
particle; dust; nucleation; plasma CVD; RF discharge; amorphous silicon; silane; SiH2; laser light scattering; photoemission; microwave interferometry;
D O I
10.1143/JJAP.38.4542
中图分类号
O59 [应用物理学];
学科分类号
摘要
Growth kinetics of particles above 10 nm in size in silane RF discharges has been extensively studied and fairly well clarified. Moreover, recent developments of new measurement methods for particles below 10 nm in size have led to a rapid advance in understanding the growth processes of small particles. Such previous studies are reviewed with the accent on their initial growth phase corresponding to a particle size range below 10 nm. The notable effect of pulse modulation of the RF discharges of suppressing panicle growth is also described. Both the growth of particles and their suppression by the modulation can be explained by a model taking into account the production of key radicals (highly reactive neutral radicals of SIH2 having a high production rate), particle growth reactions initiated by the key radicals and panicle diffusion in the radical production region.
引用
收藏
页码:4542 / 4549
页数:8
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