Effect of Target-Substrate Distance on the Properties of Hetero Facing Target Sputtered Al-Ga-Zn-O Films

被引：1
|
作者：
Shin, Hyun-Su [1 ]
Seo, Ki-Won [1 ]
Lee, Ju-Hyun [1 ]
Kim, Han-Ki [1 ]
机构：
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 07期
关键词：
DEPOSITION;
D O I：
10.7567/JJAP.52.075502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effects of facing target-substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al-Ga-Zn-O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process. (C) 2013 The Japan Society of Applied Physics
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页数：6
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